ISFET Fabrication and Characterization for Hydrogen Peroxide sensing

This work presents the Ion-Sensitive Field Effect Transistor (ISFET) fabrication and electrical characterization for hydrogen peroxide sensing. Two configurations were set up to evaluate devices sensitivity concentration of solution. First, measurements with one electrode in sample solution (contained over gate area) performed, but results may not be directly related characteristics solution, due prevalence secondary effects. The second method, using two electrodes shows a higher at increasing concentrations, smallest intervals when compared electrode.